BARRIER HEIGHT CHANGE IN MIS SCHOTTKY-BARRIER DIODES

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作者：

SINGH, JP

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来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 01期

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D O I：

10.1016/0038-1101(82)90101-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：79 / 80

页数：2

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