METHOD OF FORMING SCHOTTKY-BARRIER DIODES WITH VARIABLE BARRIER HEIGHT

被引：0

|

作者：

BHATIA, HS ^{[1
]}

SCHNITZEL, RH ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C96 / C96

页数：1

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