IMPACT IONIZATION INVESTIGATIONS ON ZNSE SCHOTTKY-BARRIER DIODES

被引：16

作者：

MACH, R ^{[1
]}

LUDWIG, W ^{[1
]}

机构：

[1] DAWB,ZENT INST ELEKTR PHYS,BERLIN,EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 23卷 / 02期

关键词：

D O I：

10.1002/pssa.2210230221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：507 / 516

页数：10

共 50 条

[31] SPIN DEPENDENT CONDUCTIVITY AND PHOTO-VOLTAGE IN ZNSE-MN-2+ SCHOTTKY-BARRIER DIODES
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[32] ELECTRICAL BEHAVIOR OF SUBMICRON GAAS SCHOTTKY-BARRIER DIODES
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[34] LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER DIODES
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[39] THE AMMONIA SENSITIVITY OF PT/GAAS SCHOTTKY-BARRIER DIODES
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[40] MIXERS EMPLOYING SCHOTTKY-BARRIER PLANAR DIODES.
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