1.1V HIGH-SPEED LOW-POWER BICMOS LOGIC-CIRCUIT

被引：0
|
作者：
YEO, KS
ROFAIL, SS
机构：
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 13期
关键词：
BICMOS INTEGRATED CIRCUITS; BICMOS LOGIC CIRCUITS; LOGIC CIRCUITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1.1 V full-swing high speed, low power BiCMOS logic circuit is presented. It consists of nine devices and uses noncomplementary BiCMOS process. Bootstrapping and partial charge removal techniques are employed. HSPICE simulations have shown that the new circuit outperforms both CMOS and a recently reported circuit in terms of speed and power-delay product. An analytical expression relating the pull-up delay with its device parameters is also derived.
引用
收藏
页码：1039 / 1041
页数：3
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