REDISTRIBUTION OF IMPLANTED CHLORINE IN SIO2-FILMS ON SILICON DURING SUBSEQUENT OXIDATION

被引：2
|
作者：
SHEU, YD [1 ]
BUTLER, SR [1 ]
MAGEE, CW [1 ]
机构：
[1] RCA LABS,PRINCETON,NJ 08540
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
关键词：
D O I：
10.1007/BF02659020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：263 / 266
页数：4
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