IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

被引：27

作者：

OSBURN, CM ^{[1
]}

BASSOUS, E ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134169

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：89 / 92

页数：4

共 50 条

[1] SILICON OXIDATION STUDIES - RELIABILITY OF VERY THIN SIO2-FILMS
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C132 - C132
[2] HYDROGEN IN SIO2-FILMS ON SILICON
REVESZ, AG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 456 - 456
[3] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON
REVESZ, AG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 122 - 130
[4] HOPPING CONDUCTION IN SIO2-FILMS THERMALLY GROWN ON PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON
KRAUSE, H
SCHELL, M
GOLINSKY, HC
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02): : 569 - 573
[5] THERMAL SIO2-FILMS ON N+ POLYCRYSTALLINE SILICON - ELECTRICAL-CONDUCTION AND BREAKDOWN
FARAONE, L
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1785 - 1794
[6] GROWTH AND STRUCTURE OF NONCRYSTALLINE SIO2-FILMS ON SILICON
REVESZ, AG
MRSTIK, BJ
HUGHES, HL
JOURNAL DE PHYSIQUE, 1985, 46 (C-8): : 495 - 498
[7] NEGATIVE BIAS INSTABILITY IN SIO2-FILMS ON SILICON
RAI, BP
SRIVASTAVA, RS
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (15) : 2139 - 2146
[8] ELECTRON TRAPS IN THERMAL SIO2-FILMS ON SILICON
EMELYANOV, AM
SOVIET MICROELECTRONICS, 1986, 15 (05): : 240 - 246
[9] THE DIELECTRIC RELIABILITY OF VERY THIN SIO2-FILMS GROWN BY RAPID THERMAL-PROCESSING
FUKUDA, H
IWABUCHI, T
OHNO, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2164 - L2167
[10] CRYSTALLIZATION OF SIO2-FILMS ON SILICON-NITRIDE
CHOI, DJ
FISCHBACH, DB
SCOTT, WD
AMERICAN CERAMIC SOCIETY BULLETIN, 1983, 62 (08): : 869 - 869

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