IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

被引：27

作者：

OSBURN, CM ^{[1
]}

BASSOUS, E ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134169

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：89 / 92

页数：4

共 50 条

[21] CATHODOLUMINESCENCE OF SIO2-FILMS
MCKNIGHT, SW
PALIK, ED
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 595 - 603
[22] DIELECTRIC-CONSTANT AND DISSIPATION FACTOR IN LTCVD SIO2-FILMS
COBIANU, C
PAVELESCU, C
CATUNEANU, VM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C105 - C106
[23] SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC-BREAKDOWN ON SIO2-FILMS ON SILICON
OSBURN, CM
ORMOND, DW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1195 - 1198
[24] RECHARGEABLE E' CENTERS IN SILICON-IMPLANTED SIO2-FILMS
KALNITSKY, A
ELLUL, JP
POINDEXTER, EH
CAPLAN, PJ
LUX, RA
BOOTHROYD, AR
JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7359 - 7367
[25] NON-STEADY-STATE GROWTH OF SIO2-FILMS ON SILICON
REVESZ, AG
HUGHES, HL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C319 - C319
[26] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 413 - 417
[27] STRUCTURE OF SIO2-FILMS ON SILICON AS REVEALED BY OXYGEN-TRANSPORT
REVESZ, AG
MRSTIK, BJ
HUGHES, HL
MCCARTHY, D
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 586 - 592
[28] CHEMICAL AND STRUCTURAL ASPECTS OF IRRADIATION BEHAVIOR OF SIO2-FILMS ON SILICON
REVESZ, AG
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2102 - 2107
[29] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
HELMS, CR
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2883 - 2883
[30] PROPERTIES OF THIN SIO2-FILMS WITH INSITU DEPOSITION OF POLY SI ELECTRODES
PAN, PH
KERMANI, A
BERRY, W
LIAO, J
RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 47 - 53

← 1 2 3 4 5 →