IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

被引：27
|
作者：
OSBURN, CM [1 ]
BASSOUS, E [1 ]
机构：
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期
关键词：
D O I：
10.1149/1.2134169
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：89 / 92
页数：4
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