IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

被引：27

作者：

OSBURN, CM ^{[1
]}

BASSOUS, E ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134169

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：89 / 92

页数：4

共 50 条

[31] THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING
CHEN, CF
WU, CY
LEE, MK
CHEN, CN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1540 - 1552
[32] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SIO2-FILMS
HIRAYAMA, M
ASAI, S
MATSUMOTO, H
SAWADA, K
NAGASAWA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L329 - L332
[33] THICKNESS DEPENDENCES OF DIELECTRIC-BREAKDOWN FAILURE OF THERMAL SIO2-FILMS
TANIGUCHI, K
YAMABE, K
MATSUSHITA, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C93 - C93
[34] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SIO2-FILMS
ASAI, S
HIRAYAMA, M
MIYOSHI, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C377 - C377
[35] ELECTROCHEMICAL DIFFUSION OF ARSENIC IN SILICON THROUGH THERMAL THIN SIO2-FILMS
MARTINEZ, JL
RUIZ, JC
APPLIED PHYSICS LETTERS, 1982, 40 (07) : 630 - 631
[36] ANOMALOUS AMORPHOUS SIO2-FILMS
HAUSER, JJ
PASTEUR, GA
STAUDINGER, A
HUTTON, RS
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) : 59 - 70
[37] REDISTRIBUTION OF IMPLANTED CHLORINE IN SIO2-FILMS ON SILICON DURING SUBSEQUENT OXIDATION
SHEU, YD
BUTLER, SR
MAGEE, CW
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 263 - 266
[38] GROWTH OF ANODIC SIO2-FILMS
PANAGOPOULOS, C
BADEKAS, H
MATERIALS LETTERS, 1989, 8 (6-7) : 212 - 215
[39] CHANNEL DEFECTS IN SIO2-FILMS
REVESZ, AG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C377 - C377
[40] COBALT DIFFUSION IN SIO2-FILMS
FEDOROVICH, NA
FIZIKA TVERDOGO TELA, 1980, 22 (06): : 1875 - 1877

← 1 2 3 4 5 →