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- [3] THE EFFECT OF DEPOSITION CONDITIONS ON THE REFRACTIVE-INDEX OF LTCVD SIO2-FILMSJOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (11) : 1419 - 1420COBIANU, CPAVELESCU, CPAUNESCU, A
- [4] IMPROVEMENTS ON MEASUREMENTS OF DIELECTRIC-CONSTANT AND DISSIPATION FACTOR IN A WIDE FREQUENCY-RANGEREVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (12): : 1570 - 1575KAKIMOTO, AOGAWA, IMATSUSHITA, T
- [5] CONSTANT CURRENT STRESS BREAKDOWN IN ULTRATHIN SIO2-FILMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) : 770 - 773APTE, PPKUBOTA, TSARASWAT, KC
- [6] ANOMALOUS BEHAVIOR OF DIELECTRIC-CONSTANT OF SIO LAYERSDOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (02): : 173 - &POPOVA, LIPEYKOV, PHSTOEVA, RD
- [7] AN ETCH-RATE STUDY OF THERMALLY ANNEALED LTCVD SIO2-FILMS AS A FUNCTION OF INITIAL DEPOSITION CONDITIONSJOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (11) : 979 - 982COBIANU, CPAVELESCU, C
- [8] PHOTOCURRENTS IN SIO2-FILMSJAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 843 - 844NAZAR, FM
- [9] STATIC DIELECTRIC-CONSTANT AND DIELECTRIC-RELAXATION OF DENSIFIED SIO2 GLASSJOURNAL OF NON-CRYSTALLINE SOLIDS, 1994, 169 (1-2) : 143 - 149TAN, CZARNDT, J
- [10] CATHODOLUMINESCENCE OF SIO2-FILMSJOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 595 - 603MCKNIGHT, SWPALIK, ED