REDISTRIBUTION OF IMPLANTED CHLORINE IN SIO2-FILMS ON SILICON DURING SUBSEQUENT OXIDATION

被引：2

作者：

SHEU, YD ^{[1
]}

BUTLER, SR ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期

关键词：

D O I：

10.1007/BF02659020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：263 / 266

页数：4

共 50 条

[1] RECHARGEABLE E' CENTERS IN SILICON-IMPLANTED SIO2-FILMS
KALNITSKY, A
ELLUL, JP
POINDEXTER, EH
CAPLAN, PJ
LUX, RA
BOOTHROYD, AR
JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7359 - 7367
[2] Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon
Iacona, F
Raineri, V
La Via, F
Terrasi, A
Rimini, E
PHYSICAL REVIEW B, 1998, 58 (16) : 10990 - 10999
[3] ELECTRONIC CONDUCTION MECHANISMS OF CS-IMPLANTED SIO2-FILMS AND B-IMPLANTED SIO2-FILMS
GARTNER, W
SCHULZ, M
APPLIED PHYSICS, 1977, 12 (02): : 137 - 148
[4] HYDROGEN IN SIO2-FILMS ON SILICON
REVESZ, AG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 456 - 456
[5] SILICON OXIDATION STUDIES - RELIABILITY OF VERY THIN SIO2-FILMS
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C132 - C132
[6] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 413 - 417
[7] SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
HELMS, CR
IRENE, EA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2883 - 2883
[8] IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON THROUGH SIO2-FILMS
KAABI, L
GONTRAND, C
LEMITI, M
BALLAND, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (01): : 99 - 109
[9] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON
REVESZ, AG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 122 - 130
[10] GROWTH AND STRUCTURE OF NONCRYSTALLINE SIO2-FILMS ON SILICON
REVESZ, AG
MRSTIK, BJ
HUGHES, HL
JOURNAL DE PHYSIQUE, 1985, 46 (C-8): : 495 - 498

← 1 2 3 4 5 →