SE+ AND SN+ IMPLANTS FOR N+ LAYERS IN GAAS

被引：10
|
作者：
PATEL, KK
BENSALEM, R
SHAHID, MA
SEALY, BJ
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期
关键词：
D O I：
10.1016/0168-583X(85)90591-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：418 / 422
页数：5
相关论文
共 50 条
  • [1] ARSENIC IMPLANTS FOR SHALLOW N+ SI LAYERS
    DAVIES, DE
    KENNEDY, EF
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 359 - 362
  • [2] TRANSIENT ANNEALING OF SN+ IMPLANTED GAAS
    SHAHID, MA
    BENSALEM, R
    SEALY, BJ
    FAVENNEC, PN
    GAUNEAU, M
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 30 (04): : 531 - 539
  • [3] TELLURIUM-IMPLANTED N+ LAYERS IN GAAS
    PASHLEY, RD
    WELCH, BM
    [J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 977 - 981
  • [4] SE+ ION-IMPLANTATION INTO ENCAPSULATED GAAS
    SHAHID, MA
    GWILLIAM, R
    SEALY, BJ
    [J]. ELECTRONICS LETTERS, 1985, 21 (17) : 729 - 730
  • [5] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS
    SADANA, DK
    BOOKER, GR
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 35 - 43
  • [6] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
    FOYT, AG
    DONNELLY, JP
    LINDLEY, WT
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 395 - &
  • [7] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
    FOYT, AG
    DONNELLY, JP
    LINDLEY, WT
    [J]. APPLIED PHYSICS LETTERS, 1969, 14 (12) : 372 - &
  • [8] TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS
    GWILLIAM, R
    BENSALEM, R
    SEALY, B
    STEPHENS, K
    [J]. PHYSICA B & C, 1985, 129 (1-3): : 440 - 444
  • [9] TRANSIENT ANNEALING FOR THE PRODUCTION OF N+ CONTACT LAYERS IN GAAS
    SEALY, BJ
    BENSALEM, R
    PATEL, KK
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 325 - 329
  • [10] DUAL IMPLANT INTO GAAS WITH SI+ AND SN+ IONS
    SHIM, TE
    ITOH, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 486 - 490
12345