SE+ AND SN+ IMPLANTS FOR N+ LAYERS IN GAAS

被引：10
|
作者：
PATEL, KK
BENSALEM, R
SHAHID, MA
SEALY, BJ
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期
关键词：
D O I：
10.1016/0168-583X(85)90591-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：418 / 422
页数：5
相关论文
共 50 条
  • [31] SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS
    ASAI, H
    SUGIURA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L815 - L817
  • [32] Effects of Sn+ Ion Implantation on the Thermoelectric Properties of n-type Lead Telluride
    Qiang SHEN
    Lianmeng ZHANG and Junguo LI(State Key Lab. of Materials Synthesis and Processing
    [J]. Journal of Materials Science & Technology, 1999, (05) : 483 - 485
  • [33] ION-BEAM MIXING OF SN LAYERS WITH GAAS
    JOHNSON, ST
    COZZOLINO, C
    WILLIAMS, JS
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 762 - 766
  • [34] Modeling the infrared reflectance of n-/n+ SiC layers on top of n+ SiC substrates for epitaxy control application
    Camassel, J
    Pernot, J
    Wang, HY
    Peyre, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (01): : 38 - 43
  • [35] REFRACTIVE-INDEX CHANGES FORMED BY N+ IMPLANTS IN SILICA
    FAIK, AB
    CHANDLER, PJ
    TOWNSEND, PD
    WEBB, R
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1986, 98 (1-4): : 233 - 241
  • [36] DETERMINATION OF MOBILITY AND ITS PROFILE IN N/N+ SILICON EPITAXIAL LAYERS
    GUPTA, DC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 670 - &
  • [37] TIN-DOPING OF N+ INP OMVPE LAYERS
    CLAWSON, AR
    HANSON, CM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (05) : 365 - 372
  • [38] Narrow n+/p+ isolation in retrograde well implants
    Rubin, LM
    Morris, W
    [J]. SOLID STATE TECHNOLOGY, 2003, 46 (07) : 119 - +
  • [39] MEASUREMENT OF IMPURITY PROFILE EFFECT IN N ON N+ SILICON EPITAXIAL LAYERS
    TSUNODA, Y
    MORI, O
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 1077 - &
  • [40] NEW PSEUDOMORPHIC N-/N+ GAAS/INGAAS/GAAS POWER HEMT WITH HIGH BREAKDOWN VOLTAGES
    SONODA, T
    SAKAMOTO, S
    KASAI, N
    TSUJI, S
    YAMANOUCHI, M
    TAKAMIYA, S
    KASHIMOTO, Y
    [J]. ELECTRONICS LETTERS, 1991, 27 (14) : 1303 - 1305
12345