NEW PSEUDOMORPHIC N-/N+ GAAS/INGAAS/GAAS POWER HEMT WITH HIGH BREAKDOWN VOLTAGES

被引：4
|
作者：
SONODA, T
SAKAMOTO, S
KASAI, N
TSUJI, S
YAMANOUCHI, M
TAKAMIYA, S
KASHIMOTO, Y
机构：
[1] Kitaitami Works, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 14期
关键词：
TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910815
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new pseudomorphic N-/N+ GaAs/InGaAs/GaAs power HEMT is described that has high breakdown voltage V(B) of more than 20 V and full channel current I(f) of 460 mA/mm which allows the simultaneous improvement of maximum power handling capability, linear gain GL and power-added efficiency N(add) over GaAs FETs with the same product of doping concentration and thickness of the doped layer under the gate. The 10.5 mm wide device delivered a record maximum output power of 4.7 W from a single HEMT chip with GL of 8 dB and N(add) of 25% at 14.25 GHz.
引用
收藏
页码：1303 / 1305
页数：3
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