ENHANCED BREAKDOWN VOLTAGES IN STRAINED INGAAS/GAAS STRUCTURES

被引：8
|
作者：
DAVID, JPR
MORLEY, MJ
WOLSTENHOLME, AR
GREY, R
PATE, MA
HILL, G
REES, GJ
ROBSON, PN
机构：
[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期
关键词：
D O I：
10.1063/1.108354
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The breakdown voltage (V(BD)) in a semiconductor is usually proportional to its band-gap (E(g)) through the dependence of the impact ionization process on the threshold voltage (E(th)). It has recently been suggested that strain can cause E(th) to increase even when E(g) decreases, raising the possibility of narrow band-pp materials with large V(BD). By growing a range of strained InGaAs/GaAs multiple quantum well (MQW) pin diode structures and measuring V(BD), we show that the presence of strained InGaAs increases V(BD) confirming that it has a larger E(th) than GaAs.
引用
收藏
页码：2042 / 2044
页数：3
相关论文
共 50 条
  • [1] LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES
    DAVID, JPR
    KIGHTLEY, P
    CHEN, YH
    GOH, TS
    GREY, R
    HILL, G
    ROBSON, PN
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 373 - 378
  • [2] LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES
    DAVID, JPR
    WOLSTENHOLME, AR
    CLAXTON, PA
    GREY, R
    WOODHEAD, J
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 56 - 56
  • [3] Optimization of strained quantum-well InGaAs/GaAs heterolaser structures
    Gorbylev, V.A.
    Petrov, A.I.
    Petukhov, A.B.
    Chel'nyj, A.A.
    [J]. Kvantovaya Elektronika (Moscow), 1993, 20 (05):
  • [4] NEW PSEUDOMORPHIC N-/N+ GAAS/INGAAS/GAAS POWER HEMT WITH HIGH BREAKDOWN VOLTAGES
    SONODA, T
    SAKAMOTO, S
    KASAI, N
    TSUJI, S
    YAMANOUCHI, M
    TAKAMIYA, S
    KASHIMOTO, Y
    [J]. ELECTRONICS LETTERS, 1991, 27 (14) : 1303 - 1305
  • [5] VALENCE-BAND CHARACTERIZATION OF INGAAS GAAS AND GAAS GAASP STRAINED-LAYER STRUCTURES
    JONES, ED
    BIEFELD, RM
    KLEM, JF
    LYO, SK
    OSBOURN, GC
    [J]. SURFACE SCIENCE, 1990, 228 (1-3) : 330 - 333
  • [6] PHOTOLUMINESCENCE IN STRAINED INGAAS/GAAS SUPERLATTICES
    DAHL, DA
    DRIES, LJ
    JUNGA, FA
    OPYD, WG
    CHU, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2079 - 2082
  • [7] GROWTH OF HIGHLY STRAINED INGAAS ON GAAS
    PRICE, GL
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1288 - 1290
  • [8] Optical investigation of InGaAs-GaAs strained layer quantum well structures
    Xu, Zhongying
    Chen, Z.G.
    Xu, Jizong
    Ge, Weikun
    Zheng, Baozhen
    Andersson, T.G.
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (06): : 563 - 569
  • [9] Multisubband Electron Transport in GaAs/InGaAs Strained Coupled Quantum Well Structures
    Subudhi, Pravat Kumar
    Palo, Sangita
    Sahu, Trinath
    [J]. FUNCTIONAL MATERIALS-BOOK, 2012, 1461 : 251 - 254
  • [10] Electrooptical investigations of strained InGaAs/GaAs double quantum well laser structures
    Golombek, A
    Goldhahn, R
    Gobsch, G
    [J]. IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 243 - 250
12345