Optical investigation of InGaAs-GaAs strained layer quantum well structures

被引：0
|
作者：
Xu, Zhongying [1 ]
Chen, Z.G. [1 ]
Xu, Jizong [1 ]
Ge, Weikun [1 ]
Zheng, Baozhen [1 ]
Andersson, T.G. [1 ]
机构：
[1] Acad Sinica, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 06期
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D O I：
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学科分类号：
摘要：
17
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页码：563 / 569
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