Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers

The optical gain spectra, unamplified spontaneous emission spectra, and spontaneous radiative efficiency are extracted from the measurement of amplified spontaneous emission (ASE) on a single pass, segmented contact 0.98-mu m-emitting aluminum-free InGaAs-InGaAsP-GaAs quantum-well (QW) laser diode. These measurements provide a baseline for which to compare higher strain InGaAs QW lasers emitting near 1.2 mu m. The peak gain-current relationship is extracted from gain spectra and the peak gain parameter go is found to agree within 25% of the value extracted using conventional cavity length analysis for 0.98-mu m-emitting devices. The spontaneous radiative current is extracted using the fundamental connection between gain and unamplified spontaneous emission, which in turn gives an estimate of the amount of nonradiative recombination in this material system. The spontaneous radiative efficiency, the ratio of spontaneous radiative current to total current, at room temperature of 0.98-mu m-emitting InGaAs QW laser material is found to be in the range of 40%-54%, which is 2.5-3.5 times larger than that of highly strained InGaAs QW laser emitting near lambda = 1.2 mu m Whereas the gain parameter, go = dg/d(In j), was measured to be 1130 and 1585 cm (-1) for the 0.98-mu m- and 1.2-mu m-emitting materials, respectively. From the calculated below threshold current injection efficiency of 75%-85%, we deduce that the internal radiative efficiency of the QW material is similar to 20% higher than the ratio of internal radiative current to external injected current extracted directly from ASE measurements.