Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures

被引：5

作者：

David, JPR ^{[1
]}

Sale, TE ^{[1
]}

Pabla, AS ^{[1
]}

RodriquezGirones, PJ ^{[1
]}

Woodhead, J ^{[1
]}

Grey, R ^{[1
]}

Rees, GJ ^{[1
]}

Robson, PN ^{[1
]}

Skolnick, MS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

semiconductors; piezoelectric; (111)B; p-i-n diodes;

D O I：

10.1016/0921-5107(95)01384-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the room temperature (RT) photoluminescence (PL) in a series of InGaAs-GaAs structures grown on (111)B GaAs substrates. Unlike conventional (100) grown multi-quantum well (MQW) p-i-n structures, the RT PL peak position and lineshape in (111)B grown structures are determined by details of the barrier width, intrinsic region thickness and number of wells. The PL is also found to be extremely sensitive to excitation power, making interpretation of the results complicated.

引用

页码：42 / 46

页数：5

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