A CORNER REFLECTOR INGAAS-GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL COUPLED LASER ARRAY

被引：7
|
作者：
FANG, ZJ
SMITH, GM
FORBES, DV
COLEMAN, JJ
机构：
[1] Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
[2] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期
基金：
美国国家科学基金会;
关键词：
Junction lasers - Laser arrays - Rear mirrors - Reflector arrays - Total internal reflection;
D O I：
10.1109/68.265874
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaAs-GaAs-AlGaAs strained layer single quantum laser array with a reactive ion etched corner reflector array as its rear facet has been fabricated. The corner reflectors play a two-fold role as a highly reflective rear mirror and as a phase-locking coupler. Phase locked operation with beam widths as low as 0.64-degrees are obtained at pumping currents up to 4xI(th) and output powers up to 60 mW. The coupling mechanism and the benefit of the corner reflector to output performance are discussed.
引用
收藏
页码：10 / 12
页数：3
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