HIGH-POWER OPERATION IN 0.98 MU-M STRAINED-LAYER INGAAS-GAAS SINGLE-QUANTUM-WELL RIDGE WAVE-GUIDE LASERS

被引：13
|
作者：
TAKESHITA, T
OKAYASU, M
UEHARA, S
机构：
[1] NTT Optoelectronics Laboratories
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 12期
关键词：
D O I：
10.1109/68.62006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu-m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9-mu-m-wide ridge and 600-mu-m-long cavity.
引用
收藏
页码：849 / 851
页数：3
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