LOW-THRESHOLD STRAINED-LAYER INGAAS RIDGE WAVE-GUIDE LASERS

被引：17
|
作者：
TAKESHITA, T
OKAYASU, M
KOGURE, O
UEHARA, S
机构：
[1] NTT Opto-Electronics Laboratories, Wakamiya, Atsugi-shi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期
关键词：
Grin-sch; Ingaas strained layer; Single quantum well;
D O I：
10.1143/JJAP.29.L1138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strained-layer InGaAs graded-index separate confinement heterostructure single-quantum-well (SQW) lasers have been fabricated. The threshold current dependence on cavity length using a 150- µm-wide broad contact laser yielded a transparency current of 49 A/cm2 and a differential gain coefficient of 10.8 cm/A, values which are both superior to those of conventional GaAs SQW lasers. A CW threshold current of fabricated 3- µm-wide ridge waveguide lasers was reduced to 2.8 mA by HR-HR coating at a lasing wavelength of 972 nm. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码：L1138 / L1140
页数：3
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