EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION

被引：0
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作者：
FOYT, AG
DONNELLY, JP
LINDLEY, WT
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1969年 / 14卷 / 03期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：395 / &
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