TRANSIENT ANNEALING OF SN+ IMPLANTED GAAS

被引：3
|
作者：
SHAHID, MA [1 ]
BENSALEM, R [1 ]
SEALY, BJ [1 ]
FAVENNEC, PN [1 ]
GAUNEAU, M [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 30卷 / 04期
关键词：
D O I：
10.1016/0168-583X(88)90129-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：531 / 539
页数：9
相关论文
共 50 条
  • [1] ANNEALING EFFECT FOR HEAVILY SN-IMPLANTED GAAS
    SHIM, TE
    ITOH, T
    YAMAMOTO, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4635 - 4639
  • [2] TRANSIENT CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    CLARKE, RC
    ELDRIDGE, GW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1077 - 1082
  • [3] DAMAGE AND ANNEALING BEHAVIOR STUDIES OF SN AND TE DUAL IMPLANTED GAAS
    KURUP, MB
    ARORA, BM
    PRASAD, KG
    SHARMA, RP
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3): : 766 - 769
  • [4] Annealing behaviour of high energy 120Sn implanted GaAs
    Ali, YP
    Salvi, VP
    Narsale, AM
    Arora, BM
    Kanjilal, D
    Mehta, GK
    [J]. SOLID STATE PHENOMENA, 1997, 55 : 98 - 100
  • [5] DUAL IMPLANT INTO GAAS WITH SI+ AND SN+ IONS
    SHIM, TE
    ITOH, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 486 - 490
  • [6] SE+ AND SN+ IMPLANTS FOR N+ LAYERS IN GAAS
    PATEL, KK
    BENSALEM, R
    SHAHID, MA
    SEALY, BJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 418 - 422
  • [7] Reflectance, transmittance, and absorbance of ZnO implanted with 60 keV Sn+ ions
    Dang, Giang T.
    Kawaharamura, Toshiyuki
    Nitta, Noriko
    Hirao, Takashi
    Yoshiie, Toshimasa
    Taniwaki, Masafumi
    [J]. SURFACE & COATINGS TECHNOLOGY, 2013, 229 : 125 - 129
  • [8] High temperature annealing in high energy 120Sn implanted GaAs
    Ali, YP
    Narsale, AM
    Arora, BM
    Lokhre, SG
    Salvi, VP
    Kanjilal, D
    Mehta, GK
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 285 - 288
  • [9] AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS
    BENSALEM, R
    BARRETT, NJ
    SEALY, BJ
    [J]. ELECTRONICS LETTERS, 1983, 19 (03) : 112 - 113
  • [10] Annealing behaviour of GaAs implanted with 70 MeV 120Sn ions
    Ali, Yousuf P.
    Nair, Geeta
    Narsale, A. M.
    Chandrasekaran, K. S.
    Arora, B. M.
    [J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2009, 47 (03) : 170 - 174
12345