TRANSIENT ANNEALING OF SN+ IMPLANTED GAAS

被引：3
|
作者：
SHAHID, MA [1 ]
BENSALEM, R [1 ]
SEALY, BJ [1 ]
FAVENNEC, PN [1 ]
GAUNEAU, M [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 30卷 / 04期
关键词：
D O I：
10.1016/0168-583X(88)90129-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：531 / 539
页数：9
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