TRANSIENT CAPLESS ANNEALING OF ION-IMPLANTED GAAS

被引：7

|

作者：

CLARKE, RC

ELDRIDGE, GW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1077 / 1082

页数：6

相关论文

共 50 条

[1] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
EISEN, FH
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 94 - 95
[2] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
SIU, DP
IMMORLICA, AA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 722 - 722
[3] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
EISEN, FH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1259 - 1260
[4] CAPLESS ANNEALING OF ION-IMPLANTED GAAS IN AUTOMATICALLY EVAPORATED VAPOR
LEE, CT
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 554 - 556
[5] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR
KASAHARA, J
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543
[6] PILL-BOX CAPLESS THERMAL-HEAT-PULSE ANNEALING OF ION-IMPLANTED GAAS
HAYDL, WH
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 78 - 81
[7] RAPID ANNEALING OF ION-IMPLANTED GAAS
WESCH, W
GOTZ, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 745 - 766
[8] ANNEALING OF EXPANSION IN ION-IMPLANTED GAAS
HANAZAWA, T
YAMAGUCH.J
GAMO, K
ITOH, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) : 1487 - 1488
[9] LASER ANNEALING OF ION-IMPLANTED GAAS
SEALY, BJ
KULAR, SS
STEPHENS, KG
SADANA, D
BOOKER, GR
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 121 - 124
[10] ANNEALING CHARACTERISTICS OF BE ION-IMPLANTED GAAS
NOJIMA, S
KAWASAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1845 - 1850

← 1 2 3 4 5 →