RAPID ANNEALING OF ION-IMPLANTED GAAS

被引：14
|
作者：
WESCH, W
GOTZ, G
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期
关键词：
D O I：
10.1002/pssa.2210940241
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：745 / 766
页数：22
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