AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS

被引：17

|

作者：

BENSALEM, R

BARRETT, NJ

SEALY, BJ

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 03期

关键词：

D O I：

10.1049/el:19830080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：112 / 113

页数：2

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