ON THE REDISTRIBUTION OF IMPLANTED BE IN SEMI-INSULATING INP AFTER ANNEALING

被引：0
|
作者：
MOLNAR, B
KELNER, G
MORRISON, GH
RAMSEYER, G
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] CORNELL UNIV,ITHACA,NY 14853
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C97 / C97
页数：1
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