FORMATION OF CONDUCTING LAYERS BY IRRADIATION OF THE SURFACE OF SILICON WITH A LASER PLASMA FORMED BY THE EROSION OF BORON AND SUBSEQUENT ANNEALING

被引：0
|
作者：
KALYAGIN, MA
STRIKOVSKII, MD
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：604 / 606
页数：3
相关论文
共 50 条
  • [11] THE EFFECT OF RF PLASMA OXIDATION AND THE SUBSEQUENT TEMPERATURE ANNEALING ON THE MORPHOLOGY OF THE SILICON SURFACE
    ATANASSOVA, ED
    TONCHEVA, LT
    THIN SOLID FILMS, 1986, 137 (02) : 235 - 242
  • [12] ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF SILICON LAYERS DIRECTLY DOPED WITH BORON BY EXCIMER LASER IRRADIATION
    NIPOTI, R
    BIANCONI, M
    FABBRI, R
    SERVIDORI, M
    NICOLETTI, S
    CANTERI, R
    APPLIED SURFACE SCIENCE, 1989, 43 : 321 - 324
  • [13] FORMATION AND CONTROL OF BORON BURIED LAYERS IN SILICON USING AN EXCIMER-LASER
    VERMA, G
    SLAOUI, A
    TALWAR, S
    SIGMON, TW
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (01) : 14 - 16
  • [14] Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing
    Klinger, D.
    Auleytner, J.
    Zymierska, D.
    Nowicki, L.
    Journal of Alloys and Compounds, 2004, 362 (1-2): : 282 - 286
  • [15] Direct writing of divacancy centers in silicon carbide by femtosecond laser irradiation and subsequent thermal annealing
    Almutairi, A. F. M.
    Partridge, J. G.
    Xu, Chenglong
    Cole, I. S.
    Holland, A. S.
    APPLIED PHYSICS LETTERS, 2022, 120 (01)
  • [16] Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing
    Klinger, D
    Auleytner, J
    Zymierska, D
    Nowicki, L
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 362 (1-2) : 282 - 286
  • [17] Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing
    Cherkova, S. G.
    Volodin, V. A.
    Skuratov, V. A.
    Stoffel, M.
    Rinnert, H.
    Vergnat, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2023, 535 : 132 - 136
  • [18] Black silicon with nanostructured surface formed by low energy helium plasma irradiation
    Takamura, S.
    Aota, T.
    Iwata, H.
    Maenaka, S.
    Fujita, K.
    Kikuchi, Y.
    Uesugi, Y.
    APPLIED SURFACE SCIENCE, 2019, 487 : 755 - 765
  • [19] Effect of proton irradiation and subsequent thermal annealing on the characteristics of thin-film silicon solar cells and microcrystalline silicon layers
    Kuendig, J
    Shah, A
    CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, : 974 - 977
  • [20] Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation
    Poon, CH
    Cho, BJ
    Lu, YF
    Bhat, M
    See, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02): : 706 - 709
12345