共 50 条
- [31] Effect of laser-plasma X-ray irradiation on crystallization of amorphous silicon film by excimer laser annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (41-44): : L1061 - L1063
- [33] FORMATION OF DEFECTS IN SURFACE-LAYERS OF SILICON UNDER THE ACTION OF LASER-RADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 688 - 690
- [35] The Formation of Helium Bubbles in Silicon Surface Layers via Plasma Immersion Ion Implantation Moscow University Physics Bulletin, 2017, 72 : 563 - 568
- [36] The porous structure of silicon-containing surface layers formed on titanium by plasma-electrolytic oxidation Protection of Metals and Physical Chemistry of Surfaces, 2014, 50 : 499 - 507
- [38] Formation Of Arsenic Rich Silicon Oxide Under Plasma Immersion Ion Implantation And Laser Annealing ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 183 - 188
- [39] ROLE OF NITROGEN IN FORMATION OF INVERSION LAYERS BY BOMBARDMENT OF P-TYPE SILICON WITH INERT-GAS IONS AND SUBSEQUENT ANNEALING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2026 - &
- [40] The microstructure of Si surface layers after plasma-immersion He+ ion implantation and subsequent thermal annealing JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 50 : 539 - 546