COMPARISON OF OPERATION OF GAAS SINGLE- AND DOUBLE-HETEROSTRUCTURE LASER-DIODES IN AN EXTERNAL CAVITY

被引：0
|
作者：
ROSSI, JA [1 ]
STILLMAN, GE [1 ]
HSIEH, JJ [1 ]
HECKSCHE.H [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 11期
关键词：
D O I：
10.1109/T-ED.1974.18032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：741 / 741
页数：1
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