COMPARISON OF OPERATION OF GAAS SINGLE- AND DOUBLE-HETEROSTRUCTURE LASER-DIODES IN AN EXTERNAL CAVITY

被引：0

作者：

ROSSI, JA ^{[1
]}

STILLMAN, GE ^{[1
]}

HSIEH, JJ ^{[1
]}

HECKSCHE.H ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 11期

关键词：

D O I：

10.1109/T-ED.1974.18032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 741

页数：1

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