INFLUENCE OF HIGH-LEVEL INJECTION ON THE IMPEDANCE CHARACTERISTICS OF GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER-DIODES

被引：0
|
作者：
ALALUSI, MR
DARLING, RB
机构：
[1] Solid-State Laboratory, Department of Electrical Engineering, FT-10, University of Washington, Seattle
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期
关键词：
D O I：
10.1063/1.345547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Existing analytical descriptions of the small-signal impedance characteristics of double-heterostructure laser diodes have been based upon the dynamics of a single carrier population (electrons) coupled to the photon density of the cavity. However, the high level of injection necessary to produce the carrier population inversion is more accurately described by a bipolar approach involving both the injected electrons and holes. A bipolar model is presented which includes high-level injection boundary conditions appropriate to the heterojunctions of a buried-channel laser diode. The inclusion of high-level injection conditions is shown to increase the threshold voltage for lasing and the small-signal impedance particularly for the case of thick active layers.
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页码：2127 / 2135
页数：9
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