GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS

被引：179

|

作者：

HAYASHI, I

PANISH, MB

REINHART, FK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.1660469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1929 / &

相关论文

共 50 条

[1] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS
TSANG, WT
LOGAN, RA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469
[2] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS
PINKAS, E
HAYASHI, I
MILLER, BI
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2827 - &
[3] MAGNETORESISTANCE IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE WITH DOUBLE SUBBAND OCCUPANCY
VANHOUTEN, H
WILLIAMSON, JG
BROEKAART, MEI
FOXON, CT
HARRIS, JJ
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2756 - 2758
[4] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER
YONEZU, H
SAKUMA, I
KOBAYASH.K
KAMEJIMA, T
UENO, M
NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1585 - 1592
[5] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
[6] CALCULATED TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 70 - 73
[7] LASING CHARACTERISTICS IN A DEGRADED GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASER
YONEZU, H
UENO, M
KAMEJIMA, T
SAKUMA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) : 835 - 842
[8] INTEGRATED GAAS-ALXGA1-XAS INJECTION-LASERS AND DETECTORS WITH ETCHED REFLECTORS
MERZ, JL
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (10) : 530 - 533
[9] TAPER COUPLED GAAS-ALXGA1-XAS INJECTION LASERS WITH DISTRIBUTED BRAGG REFLECTORS
REINHART, FK
LOGAN, RA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1060 - 1060
[10] CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
TSANG, WT
WEISBUCH, C
MILLER, RC
DINGLE, R
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 673 - 675

← 1 2 3 4 5 →