MULTIPLE THERMAL-OXIDATION OF SILICON AND ELECTROPHYSICAL PROPERTIES OF SILICON-OXIDE FILMS AND SI-SIO2 BONDING LAYER

被引：2

作者：

KROPMAN, D ^{[1
]}

LANGOVITS, P ^{[1
]}

VINNAL, M ^{[1
]}

MEYLER, B ^{[1
]}

机构：

[1] ACAD SCI ESSSR,CYBERNETICS INST,TALLIN,ESSSR

来源：

THIN SOLID FILMS | 1976年 / 34卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90138-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：91 / 93

页数：3

共 50 条

[21] EPR INVESTIGATION OF SI-SIO2 BONDING LAYER
KROPMAN, D
SUGIS, A
VINNAL, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : K1 - &
[22] Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
Åkermark, T
Gosset, LG
Ganem, JJ
Trimaille, I
Rigo, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) : 3389 - 3392
[23] OXIDATION OF SINGULAR AND VICINAL SURFACES OF SILICON - THE STRUCTURE OF SI-SIO2 INTERFACE
MAZUR, JH
GRONSKY, R
WASHBURN, J
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 463 : 88 - 92
[24] THERMOMECHANICAL PROPERTIES OF AMORPHOUS-SILICON AND NONSTOICHIOMETRIC SILICON-OXIDE FILMS
JANSEN, F
MACHONKIN, MA
PALMIERI, N
KUHMAN, D
JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4732 - 4736
[25] KINETICS OF THERMAL GROWTH OF THIN SILICON-OXIDE FILMS
SARTI, GC
SANTARELLI, F
RODA, GC
CHEMICAL ENGINEERING SCIENCE, 1986, 41 (10) : 2699 - 2705
[26] PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES IN SILICON-ON-INSULATOR FILMS
CARLOS, WE
APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1450 - 1452
[27] THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON
MOSLEHI, MM
SHATAS, SC
SARASWAT, KC
APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1353 - 1355
[28] THE SIO2/SI INTERFACE STRUCTURE AND ELECTRICAL-PROPERTIES OF ANODICALLY GROWN SILICON-OXIDE
NOMURA, S
SHIBE, S
KITAMURA, N
NANJO, J
DENKI KAGAKU, 1989, 57 (01): : 47 - 54
[29] THERMAL-OXIDATION KINETICS OF (100)SILICON AND (111)SILICON IN NITROUS-OXIDE
DEMEO, RC
CHOW, TP
APPLIED PHYSICS LETTERS, 1995, 67 (04) : 500 - 502
[30] Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface
Pantelides, Sokrates T.
Ramamoorthy, Madhavan
Journal of Non-Crystalline Solids, 1999, 254 : 38 - 46

← 1 2 3 4 5 →