Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface

被引：0
|
作者：
Pantelides, Sokrates T. [1 ,2 ]
Ramamoorthy, Madhavan [1 ,3 ]
机构：
[1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[2] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
[3] AT and T, Atlanta, GA, United States
来源：
Journal of Non-Crystalline Solids | 1999年 / 254卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：38 / 46
相关论文
共 50 条
  • [1] Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface
    Pantelides, ST
    Ramamoorthy, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 254 : 38 - 46
  • [2] Atomic dynamics during silicon oxidation and the nature of defects at the Si-SiO2 interface
    Pantelides, ST
    Ramamoorthy, M
    SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING, 1998, 490 : 59 - 70
  • [3] Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
    Åkermark, T
    Gosset, LG
    Ganem, JJ
    Trimaille, I
    Rigo, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) : 3389 - 3392
  • [4] Atomic-scale structure of the Si-SiO2 and SiC-SiO2 interfaces and the origin of their contrasting properties
    Buczko, R
    Pennycook, SJ
    Pantelides, ST
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 227 - 232
  • [5] Atomic-scale structure of SiO2/Si interface formed by furnace oxidation
    Miyata, N
    Watanabe, H
    Ichikawa, M
    PHYSICAL REVIEW B, 1998, 58 (20): : 13670 - 13676
  • [6] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE
    HAHN, PO
    HENZLER, M
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127
  • [7] THE ROLE OF THE SI-SIO2 INTERFACE IN SILICON OXIDATION-KINETICS
    PLUMMER, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C95 - C95
  • [8] INDIVIDUAL DEFECTS AT THE SI-SIO2 INTERFACE
    KIRTON, MJ
    UREN, MJ
    COLLINS, S
    SCHULZ, M
    KARMANN, A
    SCHEFFER, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1116 - 1126
  • [9] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE
    CHANG, ST
    WU, JK
    LYON, SA
    APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664
  • [10] Hydrogenation/deuteration of the Si-SiO2 interface:: Atomic-scale mechanisms and limitations -: art. no. 112107
    Tsetseris, L
    Pantelides, ST
    APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3
12345