Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface

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作者：
Pantelides, Sokrates T. [1 ,2 ]
Ramamoorthy, Madhavan [1 ,3 ]
机构：
[1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[2] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
[3] AT and T, Atlanta, GA, United States
来源：
Journal of Non-Crystalline Solids | 1999年 / 254卷
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页码：38 / 46
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