共 50 条
- [1] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness [J]. J Electrochem Soc, 3 (1021-1025):
- [4] MODEL OF ELECTRONIC STATES AT THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 872 - 878
- [5] ELECTRONIC EFFECTS OF La AT THE Si-SiO2 INTERFACE [J]. Journal of Electronics(China), 1985, (04) : 350 - 353
- [7] ELECTRONIC-STRUCTURE OF A MODEL SI-SIO2 INTERFACE [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 457 - 457
- [8] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744
- [9] Si-SiO2 interface trap capture properties [J]. MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 115 - 118
- [10] SOME PROPERTIES OF STRUCTURE OF SI-SIO2 INTERFACE [J]. THIN SOLID FILMS, 1977, 44 (03) : 295 - 303