ELECTRONIC PROPERTIES OF A CHARACTERISTIC DISCRETE LEVEL AT SI-SIO2 INTERFACE

被引：0

作者：

JOHNSON, NM ^{[1
]}

BARTELINK, DJ ^{[1
]}

MCVITTIE, JP ^{[1
]}

机构：

[1] XEROX CORP,RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1348 / 1349

页数：2

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