ELECTRONIC PROPERTIES OF A CHARACTERISTIC DISCRETE LEVEL AT SI-SIO2 INTERFACE

被引：0
|
作者：
JOHNSON, NM [1 ]
BARTELINK, DJ [1 ]
MCVITTIE, JP [1 ]
机构：
[1] XEROX CORP,RES CTR,PALO ALTO,CA 94304
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期
关键词：
D O I：
10.1109/T-ED.1978.19312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1348 / 1349
页数：2
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