MULTIPLE THERMAL-OXIDATION OF SILICON AND ELECTROPHYSICAL PROPERTIES OF SILICON-OXIDE FILMS AND SI-SIO2 BONDING LAYER

被引：2
|
作者：
KROPMAN, D [1 ]
LANGOVITS, P [1 ]
VINNAL, M [1 ]
MEYLER, B [1 ]
机构：
[1] ACAD SCI ESSSR,CYBERNETICS INST,TALLIN,ESSSR
来源：
THIN SOLID FILMS | 1976年 / 34卷 / 01期
关键词：
D O I：
10.1016/0040-6090(76)90138-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：91 / 93
页数：3
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