IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE

被引：39
|
作者：
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L573 / L575
页数：3
相关论文
共 50 条
  • [1] MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS
    HIYAMIZU, S
    MIMURA, T
    ISHIKAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 161 - 168
  • [2] N+ CONTACT N-ALGAAS/GAAS 2DEG FETS BY SELECTIVE EPITAXY
    MIYAMOTO, H
    OHATA, K
    TOYOSHIMA, H
    SUZUKI, K
    ITOH, H
    SUNAKAWA, H
    USUI, A
    OGAWA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2545 - 2545
  • [3] IMPROVED ELECTRON MOBILITY HIGHER THAN 106 cm2/Vs IN SELECTIVITY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE.
    Hiyamizu, Satoshi
    Saito, Junji
    Nanbu, Kazuo
    Ishikawa, Tomonori
    Japanese Journal of Applied Physics, Part 2: Letters, 1983, 22 (10): : 609 - 611
  • [4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    HIYAMIZU, S
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
  • [5] MBE-GROWN SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON MOBILITY TRANSISTORS.
    Hiyamizu, Satoshi
    Mimura, Takashi
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 258 - 271
  • [6] CORRELATIONS OF THE REMOTE IMPURITY CHARGES - A METHOD OF 2DEG MOBILITY TUNING IN GAAS/ALGAAS HETEROSTRUCTURES
    SUSKI, T
    WISNIEWSKI, P
    DMOWSKI, LH
    GORCZYCA, I
    SMOLINER, J
    GORNIK, E
    BOHM, G
    WEIMANN, G
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 677 - 680
  • [7] Two-dimensional electron gas mobility enhancement in inverted GaAs/n-AlGaAs heterostructures grown by molecular beam epitaxy
    Fatt, Yoon Soon, 1600, (31):
  • [8] 2-DIMENSIONAL ELECTRON-GAS MOBILITY ENHANCEMENT IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    FATT, YS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07): : 2075 - 2078
  • [9] TWO-DIMENSIONAL ELECTRON GAS IN MBE GROWN SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURES.
    Jiang Pihuan
    Li Yuexia
    Yang Fuhua
    Wang Xinghua
    1600, (07):
  • [10] TWO-DIMENSIONAL ELECTRON-GAS IN MBE-GROWN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES
    JIANG, PH
    LI, YX
    YANG, FH
    WANG, XH
    CHINESE PHYSICS, 1986, 6 (03): : 783 - 785
12345