IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE

被引：39
|
作者：
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L573 / L575
页数：3
相关论文
共 50 条
  • [31] MBE MD AlGaAs/GaAs调制反射谱及其与2DEG浓度的关系(英文)
    汤寅生
    江德生
    庄蔚华
    孔梅影
    固体电子学研究与进展, 1989, (04) : 431 - 431
  • [32] SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH ELECTRON-MOBILITY TRANSISTOR IC APPLICATIONS
    HIYAMIZU, S
    SAITO, J
    KONDO, K
    YAMAMOTO, T
    ISHIKAWA, T
    SASA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 585 - 587
  • [33] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES
    HIYAMIZU, S
    MIMURA, T
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463
  • [34] Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis
    Kumar, Rahul
    Mukhopadhyay, P.
    Jana, S. K.
    Bag, A.
    Ghosh, S.
    Das, S.
    Mahata, M. K.
    Biswas, D.
    2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE), 2014,
  • [35] EFFECTS OF TUNGSTEN-HALOGEN LAMP ANNEALING ON A SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURE GROWN BY MBE.
    Tatsuta, Shigeru
    Inata, Tsuguo
    Okamura, Shigeru
    Hiyamizu, Satoshi
    1600, (23):
  • [36] Characterization of SET electrometer coupled to the quantum dot in GaAs AlGaAs 2DEG
    Ishibashi, K
    Ida, T
    Kotani, H
    Ochiai, Y
    Sugano, T
    Aoyagi, Y
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 185 - 187
  • [37] TIME-RESOLVED MEASUREMENTS OF THE ENERGY RELAXATION IN THE 2DEG OF ALGAAS/GAAS
    LUTZ, J
    KUCHAR, F
    ISMAIL, K
    NICKEL, H
    SCHLAPP, W
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 399 - 402
  • [38] Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
    Al-Ahmadi, N. A.
    Al-Jawhari, H. A.
    RESULTS IN PHYSICS, 2016, 6 : 67 - 69
  • [39] DYNAMIC INTERACTION OF BULK ACOUSTIC-WAVES WITH A 2DEG AT A GAAS/ALGAAS HETEROJUNCTION IN A STRONG MAGNETIC-FIELD - 2DEG RESPONSE
    KOZOREZOV, AG
    RAMPTON, VW
    PHYSICA B, 1994, 194 : 421 - 422
  • [40] EXTREMELY HIGH 2DEG CONCENTRATION IN SELECTIVELY DOPED IN0.53GA0.47AS N-IN0.53AL0.48AS HETEROSTRUCTURES GROWN BY MBE
    NAKATA, Y
    SASA, S
    SUGIYAMA, Y
    FUJII, T
    HIYAMIZU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (01): : L59 - L61
12345