IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE

被引：39
|
作者：
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L573 / L575
页数：3
相关论文
共 50 条
  • [41] HIGH-MOBILITY INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SAKU, T
    HORIKOSHI, Y
    TARUCHA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9A): : 4837 - 4842
  • [42] High-mobility inverted modulation-doped GaAs/AlGaAs heterostructures
    Saku, Tadashi, 1600, (33):
  • [43] A quasi-classical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples
    Studenikin, S. A.
    Fedorych, O. N.
    Maude, D. K.
    Potemski, M.
    Sachrajda, A. S.
    Wasilewski, Z. R.
    Gupta, J. A.
    Magarill, L. I.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1424 - 1426
  • [44] Electrical conduction of AlGaN/GaN 2DEG heterostructures grown on si(111)
    Kocan, M
    Bertelli, M
    Donà, E
    Rizzi, A
    Grimm, M
    Lüth, H
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 196 - 199
  • [45] THE EFFECT OF LATERAL CONSTRICTION AND HIGH MEASURING FREQUENCIES ON THE CONDUCTIVITY OF THE 2DEG IN GAAS/ALGAAS
    LIM, KY
    AUER, I
    KUCHAR, F
    WEIMANN, G
    SCHLAPP, W
    FORCHEL, A
    MENSCHIG, A
    SURFACE SCIENCE, 1990, 229 (1-3) : 50 - 53
  • [46] Optical properties of the two-dimensional electron gas in the N-AlGaAs/GaAs heterostructures
    Mokerov, VG
    Fedorov, YV
    Guk, AV
    Khabarov, YV
    DOKLADY AKADEMII NAUK, 1996, 348 (05) : 608 - 610
  • [47] Determination of electron temperature and energy relaxation of 2DEG in AlGaAs/GaAs HEMT channel
    Ari, M
    Turkoglu, O
    PHYSICA B-CONDENSED MATTER, 2003, 337 (1-4) : 199 - 203
  • [48] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    HIYAMIZU, S
    FUJII, T
    MIMURA, T
    NANBU, K
    SAITO, J
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458
  • [49] Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells
    Lima, FMS
    Fonseca, ALA
    Nunes, OAC
    Fanyao, Q
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5296 - 5303
  • [50] NEW INSULATED-GATE INVERTED-STRUCTURE ALGAAS/GAAS/N-ALGAAS HEMT RING OSCILLATOR
    KINOSHITA, H
    ISHIDA, T
    AKIYAMA, M
    INOMATA, H
    SANO, Y
    NISHI, S
    KAMINISHI, K
    ELECTRONICS LETTERS, 1985, 21 (23) : 1062 - 1063
12345