NEW INSULATED-GATE INVERTED-STRUCTURE ALGAAS/GAAS/N-ALGAAS HEMT RING OSCILLATOR

被引：3
|
作者：
KINOSHITA, H
ISHIDA, T
AKIYAMA, M
INOMATA, H
SANO, Y
NISHI, S
KAMINISHI, K
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 23期
关键词：
D O I：
10.1049/el:19850753
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1062 / 1063
页数：2
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  • [1] HIGH-PERFORMANCE ALGAAS/GAAS/N-ALGAAS INSULATED-GATE INVERTED-STRUCTURE HEMT RING-OSCILLATOR
    KINOSHITA, H
    SANO, Y
    NISHI, S
    ISHIDA, T
    AKIYAMA, M
    KAMINISHI, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2529 - 2530
  • [2] A NEW INSULATED-GATE INVERTED-STRUCTURE MODULATION-DOPED ALGAAS-GAAS-N-ALGAAS FIELD-EFFECT TRANSISTOR
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    SANO, Y
    ISHIDA, T
    NISHI, S
    AKIYAMA, M
    KAMINISHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L836 - L838
  • [3] HIGH-SPEED LOW-POWER RING OSCILLATOR USING INVERTED-STRUCTURE MODULATION-DOPED GAAS/N-ALGAAS FIELD-EFFECT TRANSISTORS
    KINOSHITA, H
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    AKIYAMA, M
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    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08): : 1061 - 1064
  • [4] SUBMICROMETER INSULATED-GATE INVERTED-STRUCTURE HEMT FOR HIGH-SPEED LARGE-LOGIC-SWING DCFL GATE
    KINOSHITA, H
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    INOMATA, H
    AKIYAMA, M
    KAMINISHI, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 608 - 615
  • [5] A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)
    HOTTA, T
    SAKAKI, H
    OHNO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L122 - L124
  • [6] DX-CENTER-FREE GAAS/N-ALGAAS HEMT STRUCTURES
    ISHIKAWA, T
    KONDO, K
    [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1988, 24 (02): : 143 - 149
  • [7] Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs
    Nagayama, A
    Yamauchi, S
    Hariu, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) : 517 - 522
  • [8] IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    SASA, S
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    HIYAMIZU, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L573 - L575
  • [9] A 0.5-MU-M-GATE GAAS/ALGAAS INVERTED HEMT IC - MULTIPLIER AND D/A CONVERTER
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    SEKI, S
    SAITO, T
    FUJISHIRO, HI
    SANO, Y
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2191 - 2195
  • [10] 具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT
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