A NEW INSULATED-GATE INVERTED-STRUCTURE MODULATION-DOPED ALGAAS-GAAS-N-ALGAAS FIELD-EFFECT TRANSISTOR

被引：11
|
作者：
KINOSHITA, H
SANO, Y
ISHIDA, T
NISHI, S
AKIYAMA, M
KAMINISHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.L836
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L836 / L838
页数：3
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