CORRELATIONS OF THE REMOTE IMPURITY CHARGES - A METHOD OF 2DEG MOBILITY TUNING IN GAAS/ALGAAS HETEROSTRUCTURES

被引：4

作者：

SUSKI, T ^{[1
]}

WISNIEWSKI, P ^{[1
]}

DMOWSKI, LH ^{[1
]}

GORCZYCA, I ^{[1
]}

SMOLINER, J ^{[1
]}

GORNIK, E ^{[1
]}

BOHM, G ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] TUM,WALTER SCHOTTKY,W-8046 GARCHING,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90274-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature 2DEG mobillity and carrier concentration measurements made on two modulation doped GaAs/AlGaAs heterostructures are described. We demonstrate that, depending on the method which is used to populate the metastable donor states of Si-remote impurity, different values of electron mobility can be obtained for the same 2DEG density and in the same heterostructure. Concept of the correlation in the spatial distribution of the impurity charges (i.e. positively and negatively charged states of Si donor), caused by the Coulomb interactions is employed to explain our experimental finding. The invoked effect induces a strong reduction of the 2DEG scattering and can produce the mobility enhancement by as much as a factor of two over its value with a random distribution of impurity charges.

引用

页码：677 / 680

页数：4

共 50 条

[1] IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L573 - L575
[2] MODELLING 2DEG CHARGES IN AlGaN/GaN HETEROSTRUCTURES
Longobardi, Giorgia
Udrea, Florin
Sque, Stephen
Croon, Jeroen
Hurkx, Fred
Napoli, Ettore
Sonsky, Jan
2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 363 - 366
[3] ON THE MOBILITY OF GAAS-ALGAAS HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GAAS
GOLD, A
JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 255 - 258
[4] Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: Tuning of the remote-charge correlations
Wisniewski, P
Suski, T
LitwinStaszewska, E
Brunthaler, G
Kohler, K
SURFACE SCIENCE, 1996, 361 (1-3) : 579 - 582
[5] Computational model of 2DEG mobility in AlGaN/GaN heterostructures
Abgaryan, Karine
Mutigullin, Ilya
Reviznikov, Dmitry
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 4-5, 2015, 12 (4-5): : 460 - 465
[6] Reduction of Coulomb scattering in a GaAs/AlGaAs mesoscopic 2DEG disk
Suzumura, N
Yamaguchi, M
Sawaki, N
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 617 - 618
[7] Microwave heterodyne receiver based on AlGaAs/GaAs 2DEG bolometer
Wang, K.
Ramaswamy, R.
Bell, M.
Sergeev, A.
Strasser, G.
Verevkin, A.
Mitin, V.
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
[8] Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures
Singh, Rohit
Khan, Md. Arif
Mukherjee, Shaibal
Kranti, Abhinav
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (07) : 2850 - 2854
[9] Characterization of SET electrometer coupled to the quantum dot in GaAs AlGaAs 2DEG
Ishibashi, K
Ida, T
Kotani, H
Ochiai, Y
Sugano, T
Aoyagi, Y
MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 185 - 187
[10] TIME-RESOLVED MEASUREMENTS OF THE ENERGY RELAXATION IN THE 2DEG OF ALGAAS/GAAS
LUTZ, J
KUCHAR, F
ISMAIL, K
NICKEL, H
SCHLAPP, W
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 399 - 402

← 1 2 3 4 5 →