Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: Tuning of the remote-charge correlations

被引：2
|
作者：
Wisniewski, P
Suski, T
LitwinStaszewska, E
Brunthaler, G
Kohler, K
机构：
[1] JOHANNES KEPLER UNIV, INST HALBLEITERTECH, A-4040 LINZ, AUSTRIA
[2] FRAUNHOFER INST APPL SOLID STATE PHYS, D-79108 FREIBURG, GERMANY
来源：
SURFACE SCIENCE | 1996年 / 361卷 / 1-3期
基金：
奥地利科学基金会;
关键词：
electrical conductivity; electrical transport measurements; gallium arsenide; quantum effects; quantum wells; semiconductor-semiconductor heterostructures;
D O I：
10.1016/0039-6028(96)00473-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that different spatial correlations among remote impurity charges in the GaAs/AlGaAs quantum well lead to different values of (i) the transport-relaxation time, (ii) the single-particle relaxation time, and that (iii) the different width of the integer quantum Hall plateauxs could be achieved. These findings supply qualitatively new information about the important contribution of the non-random arrangement of remote charges to the transport properties of semiconductor heterostructures.
引用
收藏
页码：579 / 582
页数：4
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