MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURE CHARGE COUPLED DEVICES

被引：12
|
作者：
MILANO, RA
COHEN, MJ
MILLER, DL
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 08期
关键词：
D O I：
10.1109/EDL.1982.25548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：194 / 196
页数：3
相关论文
共 50 条
  • [1] FUNDAMENTAL MAGNETOTRANSPORT PROPERTIES OF A GAAS-ALGAAS MODULATION-DOPED HETEROSTRUCTURE
    CHMIELOWSKI, M
    GLINSKI, M
    ZHUANG, WH
    LIANG, GB
    SUN, DZ
    KONG, MY
    PLESIEWICZ, W
    DIETL, T
    SKOSKIEWICZ, T
    ACTA PHYSICA POLONICA A, 1988, 73 (02) : 327 - 329
  • [2] NONLINEAR CHARGE CONTROL IN ALGAAS GAAS MODULATION-DOPED FETS
    HUGHES, WA
    SNOWDEN, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1617 - 1625
  • [3] Photoreflectance study of etching and annealing effect on modulation-doped AlGaAs/GaAs heterostructure
    Hwang, I
    Kim, JE
    Park, HY
    Noh, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 : S131 - S134
  • [4] A SIMPLE-MODEL FOR THE CHARACTERISTICS OF GAAS/ALGAAS MODULATION-DOPED DEVICES
    LONG, AR
    DAVIES, JH
    KINSLER, M
    VALLIS, S
    HOLLAND, MC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1581 - 1589
  • [5] PHOTOCONDUCTIVITY OF A MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURE INDUCED BY FAST-NEUTRON IRRADIATION
    WU, YS
    HUANG, Y
    LI, YK
    YANG, ZX
    ZHOU, JM
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 2154 - 2156
  • [6] ELECTRON-DISTRIBUTION IN MODULATION-DOPED ALGAAS/GAAS SINGLE QUANTUM-WELLS AND INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SUZUKI, K
    SAITO, K
    SAKU, T
    SUGIMURA, A
    HORIKOSHI, Y
    YAMADA, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1266 - 1269
  • [7] HIGH-TRANSCONDUCTANCE P-CHANNEL MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURE FETS
    HIRANO, M
    OE, K
    YANAGAWA, F
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 620 - 624
  • [8] INTERFACE STATES OF MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    CHUNG, SK
    WU, Y
    WANG, KL
    SHENG, NH
    LEE, CP
    MILLER, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 149 - 153
  • [9] PHOTOREFLECTANCE CHARACTERIZATION OF ALGAAS GAAS MODULATION-DOPED HETEROSTRUCTURES
    PAN, N
    ZHENG, XL
    HENDRIKS, H
    CARTER, J
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2355 - 2360
  • [10] Hall breakdown in a modulation-doped GaAs/AlAs heterostructure
    Bykov, A. A.
    Marchishin, I. V.
    Bakarov, A. K.
    Zhang, Jing-Qiao
    Vitkalov, S. A.
    JETP LETTERS, 2007, 85 (01) : 63 - 66
12345