MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURE CHARGE COUPLED DEVICES

被引：12
|
作者：
MILANO, RA
COHEN, MJ
MILLER, DL
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 08期
关键词：
D O I：
10.1109/EDL.1982.25548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：194 / 196
页数：3
相关论文
共 50 条
  • [31] LARGE LATERAL PHOTOVOLTAIC EFFECT IN MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    TABATABAIE, N
    MEYNADIER, MH
    NAHORY, RE
    HARBISON, JP
    FLOREZ, LT
    APPLIED PHYSICS LETTERS, 1989, 55 (08) : 792 - 794
  • [32] HOT-ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES
    SHAH, J
    PINCZUK, A
    STORMER, HL
    GOSSARD, AC
    WIEGMANN, W
    APPLIED PHYSICS LETTERS, 1984, 44 (03) : 322 - 324
  • [33] High-mobility inverted modulation-doped GaAs/AlGaAs heterostructures
    Saku, Tadashi, 1600, (33):
  • [34] CARRIER CONCENTRATION IN MODULATION-DOPED AlGaAs-GaAs HETEROSTRUCTURES.
    Weimann, G.
    Schlapp, W.
    Applied Physics A: Solids and Surfaces, 1985, A37 (03): : 139 - 143
  • [35] ALGAAS/GAAS BIPOLAR-TRANSISTORS WITH A MODULATION-DOPED SUPERLATTICE EMITTER
    PALMIER, JF
    SIBILLE, A
    HARMAND, JC
    DANGLA, J
    ELECTRONICS LETTERS, 1987, 23 (18) : 936 - 938
  • [36] Conductivity of modulation-doped AlGaAs/GaAs/AlGaAs quantum well with an inserted thin AlAs barrier
    Pozela, K
    Pozela, J
    Jucienë, V
    NANOTECHNOLOGY, 2001, 12 (04) : 566 - 569
  • [37] Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields
    Shin, Y. H.
    Park, Y. H.
    Perry, C. H.
    Simmons, J. A.
    Takamasu, T.
    Kim, Yongmin
    APPLIED PHYSICS LETTERS, 2009, 95 (08)
  • [38] Quantum landau levels in n-type modulation-doped GaAs/AlGaAs coupled double quantum wells
    Jaouane, M.
    Ed-Dahmouny, A.
    Fakkahi, A.
    Arraoui, R.
    Azmi, H.
    Sali, A.
    El Sayed, M. E.
    Samir, A.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2024, 608
  • [39] Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells
    Naik, K. Gopalakrishna
    Rao, K. S. R. K.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (02) : 210 - 212
  • [40] WEAK LOCALIZATION AND ELECTRON ELECTRON INTERACTION IN MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    TABORYSKI, R
    LINDELOF, PE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) : 933 - 946
12345